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Novel Semiconductor Optical Amplifier with Large Gain and High Saturation Output Power
13/09/2021
Abstract: A novel semiconductor optical amplifier (SOA) design achieving large gain and high saturation output power without reaching excessive power consumption level is presented. Small-signal gain above 35 dB and 22 dBm high saturation output power were measured at 1.3 A biased current.Published in: 2021 European Conference on Optical Communication (ECOC)Read more at https://ieeexplore.ieee.org/…
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Flat Noise Figure Semiconductor Optical Amplifiers
13/09/2021
Abstract: We propose a new SOA design with a detuned material at the input in order to guarantee low noise figure (NF) over the whole gain spectrum. NF reduction of 1.5 dB is experimentally achieved, and NF remains below 6.5 dB over C and L bands.Published in: 2021 European Conference on Optical Communication (ECOC) Read more at https://ieeexplore.ieee.org/…
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32dB of Optical Budget with DSP-free real time experimentation up to 50Gbit/s NRZ using O-band DFB-EAM and SOA-PIN for Higher Speed PONs
07/06/2021
We achieve 32.3dB of optical budget and 45km reach transmission in real time with an O-band EAM-DFB and SOA-PIN for 50Gbit/s NRZ standards. A DSP-free transmission was demonstrated with a semi-cooled transmitter. Published in: 2021 Optical Fiber Communications Conference and Exhibition (OFC) Read more at https://ieeexplore.ieee.org/…
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Achieving high budget classes in the downstream link of 50G-PON
02/06/2021
Abstract: With 50G passive optical networks (PONs) currently being standardized, we review the challenges of meeting the high loss budgets required in such high speed fiber access networks. Simulations of the 50 Gb/s link performance show the impact of critical parameters when using 25G-class avalanche photodiode receivers with digital signal processing. We describe how a 1342 nm electro-absorption modulated laser, with an external semiconductor optical amplifier, enables an E2-class, 20 km, downstream link for ITU-T, 50G-PON to be demonstrated. Using a 25G-class receiver and real-time equalization, a link budget of 35.6 dB was measured. With more powerful equalization performed offline, an increase in the link budget to 38.2 dB is also demonstrated. Published in: Journal of Optical Communications and Networking ( Volume: 13, Issue: 8, August 2021) Read more at https://ieeexplore.ieee.org/…
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First Demonstration of an E2 Class Downstream Link for 50Gb/s PON at 1342nm
05/03/2021
Abstract: A 1342nm EML with an external SOA has enabled the 20km, 50Gb/s downstream link for ITU-T, 50G-PON to be demonstrated for the first time. Using a 25G-class receiver and real-time equalisation, an OMA sensitivity of −24dBm and a link budget of 35.6dB were measured. Published in: 2020 European Conference on Optical Communications (ECOC) Read more at https://ieeexplore.ieee.org/…
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Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications
07/10/2020
Abstract: This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorus-based multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O- and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications. Published in: IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 27, Issue: 3, May-June 2021)Read more at https://ieeexplore.ieee.org/https://www.youtube.com/watch?v=C0NSXrSWqDs…
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Uncooled 1.55µm Electro-Absorption Modulated Laser at 28Gb/s with high power and low Vpp for datacom
26/09/2019
Abstract: We present an uncooled 28Gb/s 1.55µm electro-absorption modulated laser, based on semi-insulating buried heterostructure waveguide technology. With only 0.9V peak-to-peak voltage, dynamic extinction ratio of more than 3.5dB, and facet average output power above 5dBm are demonstrated over the temperature range from 20 to 70°C. Published in: 45th European Conference on Optical Communication (ECOC 2019) …
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Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform
11/03/2019
Abstract: In this paper, we present the hybrid III-V/Si photonic platform developed in CEA-LETI. The overall integration is done in a fully CMOS compatible 200-mm technology, scalable to 300-mm wafers, leveraging the large-scale integration capabilities of silicon photonics. III-V material is integrated on top of a mature silicon photonic front-end wafer through direct molecular bonding enabling the monolithic integration of light sources. DFB and distributed Bragg reflector (DBR) laser reference designs are used as test vehicles for the process validation. A modular approach is used in order to minimize the impact on the already qualified silicon-based devices. Collective III-V die bonding is proposed in this platform. CMOS compatible metallizations are used to form ohmic contact on n-InP and P-InGaAs leading to contact resistivity in the range of 10 -6 Ω·cm 2 . A planarized two-metal-level BEOL is used to connect the device, leading to a drastic reduction of series resistance. Finally, the functionality of both types of lasers is demonstrated with SMSR up to 50 dB and maximum output power of 5 mW. Published in: IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 25 , Issue: 5 , Sept.-Oct. 2019 ) Read more at https://ieeexplore.ieee.org/…
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1.3µm SI-BH Electro-Absorption Modulated Laser Operating at 56Gbauds/s with 8.4dB Dynamic Extinction Ratio
27/09/2018
Abstract: We present a 56Gbaud/s 13μm electro-absorption modulated laser, based on semi-insulated buried waveguide technology. A dynamic extinction ratio of 8.4dB, with 1. 8dBm fiber coupled average power, and 112Gb/s PAM4 transmission, with a BER=10 -3 , are demonstrated. Published in: 2018 European Conference on Optical Communication (ECOC) Read more at ieeexplore.ieee.org…
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Record 6dBm electroabsorption modulated laser for 10Gb/s and 25Gb/s high power budget access networks
23/03/2017
Abstract: We present an electro-absorption modulated laser with 6dBm modulated power leading to record power budget NRZ transmissions at 1.55μm: 37dB at 10Gb/s over 50km and 30dB at 28Gb/s over 10km with a pre-amplified photodiode. Published in: 2017 Optical Fiber Communications Conference and Exhibition (OFC) Read more at ieeexplore.ieee.org…
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Publications
News
Photonic Integration Week 2023
21/03/2023
The 6th Photonic Integration Week is running. Come and meet our CTO, François Lelarge, to learn more about Almae Technologies. More informations about PIW23 : https://www.youtube.com/watch?v=AoTSKwYAGJg https://www.linkedin.com/posts/upvfab-micro-fabrication-pilot-line_the-2nd-session-of-piw23-is-running-with-activity-7043898892689498112-gLq6/?utm_source=share&utm_medium=member_desktop …
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Almae Technologies on BFM TV
19/07/2022
Our CEO, Jean-Louis Gentner, talks about Almae Technologies on BFM TV. Learn about what we do in 4 minutes just below. https://almae-technologies.com/wp-content/uploads/2022/07/2022-07-04-17-48-48.mp4…
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OpTecBB’visit to Almae Technologies
04/07/2022
In his technology expedition in France, Mike Richardson, from OpTecBB, came to visit Almae Technologies. Take a look at his video….
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ISO 9001:2015 Certification
17/02/2022
ALMAE TECHNOLOGIES Quality Management System just got ISO 9001:2015 certified! #quality #ISO You can check your ISO certificate here….
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ECOC 2021 at Bordeaux from 13th-16th September 2021
09/09/2021
Almae Technologies is pleased to announce that the H2020 MASSTARTproject, led by Fraunhofer IZM and involving Almae’s laser sources, is one of the exhibitors at ECOC 2021. MASSTART intends to establish a new assembly and test paradigm for next generation 800G and 1.6T transceivers, including on-board configuration, using robust, low-cost, and high-throughput packaging and test techniques. You are kindly invited to visit the Masstart booth. Almae team will bethere and would be pleased to share the most recent products developed by Almae (56GBauds PAM4 EML, PON-EML…)….
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“Be effective in using your experience” EPIC talks to Jean-Louis Gentner, CEO of Almae Technologies
30/06/2021
Jose Pozo, ‘chief technology observer’ of EPIC, has visited Jean-Louis Gentner, the co-founder of Almae Technologies, a provider of laser components and integrated laser modulators for the telecom and datacom markets. Read more at PhotonicViews on Wiley…
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EPIC Photonics+ Virtual Exhibition and Conference 2021
25/11/2020
Almae Technologies will have a virtual booth at EPIC Photonics+ virtual exhibition to present our products. You can register to the virtual exhibition for free here and meet us at our virtual booth on the 17th-18th February 2021!…
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Almae to co-develop laser modules based on POET’s optical interposer platform for high-speed datacoms (from semiconductor-today.com)
21/06/2018
POET Technologies Inc of Toronto, Canada and San Jose, CA, USA — a designer and manufacturer of optoelectronic devices, including light sources, passive waveguides and photonic integrated circuits (PICs) for the sensing and datacom markets — has executed an agreement for the co-development of transmit device solutions with photonic product maker Almae Technologies SAS of Marcoussis, France, a spin-off from III-V Lab (the joint Nokia, Thales and CEA-Leti industrial research laboratory). Almae is majority-owned by an affiliate of Accelink Technologies Co Ltd of Wuhan, China (a manufacturer of optical components and subsystems for the datacom, telecom and network access markets), which in March entered into a memorandum of understanding (MOU) with POET for the co-development of transceivers for 100/400G markets as well as low-cost single-channel (10/25G) products for telecom applications. Read More at semiconductor-today.com…
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POET Press Release
21/06/2018
SAN JOSE, CA, June 21, 2018 – POET Technologies Inc. (“POET”) (OTCQX: POETF; TSX Venture: PTK), a designer, developer and manufacturer of optoelectronic devices, including light sources, passive wave guides and Photonic Integrated Circuits (PIC), today announced the Company has executed an agreement for the co-development of transmit device solutions with Almae Technologies SAS (“Almae”), a France-based manufacturer of advanced photonic products. The purpose of the agreement is to jointly develop, manufacture and sell a series of laser modules based on the POET Optical Interposer™ platform into high-speed data communication applications. The companies will collaborate on designs of lasers and modulators to be compatible with POET’s Optical Interposer and to provide foundry services for both epitaxial supply and device fabrication. The collective efforts of the two companies will be carried out through a series of overlapping projects, covering the exchange of data and techniques, co-development activities, commercial arrangements, and strategies for pursuing global go-to-market sales. POET’s Chief Executive Officer, Dr. Suresh Venkatesan, commented, “We are very pleased to establish a framework for collaboration with Almae, a leading European supplier of high-performance EML lasers based on a novel buried heterostructure design and an advanced PIC fabrication platform. In addition to the joint development of Optical Interposer-compatible devices, the agreement outlines an arrangement for sharing expertise and resources to accelerate time-to-market for both companies, while also expanding our collective geographic reach and providing a much larger market opportunity.” Dr. Jean-Louis Gentner, Chief Executive Officer of Almae Technologies, stated, “The framework for collaboration with POET follows closely behind the recent introduction of our 25G integrated laser-modulator (25G EML), which has broad application in high-performance photonics. The inclusion of our device designs into the POET Optical Interposer platform will expand the applications we can address in both the datacom and telecom markets. We are also pleased to be able to offer our epitaxial foundry services to POET and to take advantage of POET’s fabrication capabilities in Singapore.” About POET Technologies Inc. POET Technologies is a developer and manufacturer of optical light source products for the sensing and data communications markets. Integration of optics and electronics is fundamental to increasing functional scaling and lowering the cost of current photonic solutions. POET believes that its approach to both hybrid and monolithic integration of devices, utilizing a novel dielectric platform and proven advanced wafer-level packaging techniques enables substantial improvements in device cost, efficiency and performance. Optical engines based on this integrated approach have applications ranging from data centers to consumer products. POET is headquartered in Toronto, with operations in Silicon Valley, the United Kingdom, and Singapore. More information may be obtained at www.poet-technologies.com. About Almae Technologies SAS Almae Technologies is a spin-off company from III-V Lab (the joint Nokia, Thales and CEA-Leti industrial research laboratory), and is majority-owned by an affiliate of Accelink Technologies. Almae designs and produces InP epi wafers used to implement photonics circuits integrating semiconductor lasers. Almae’s high-speed ‘buried heterostructure’ laser technology consists of embedding the semiconductor strip constituting the laser with semi-insulating InP material, enabling good thermal exchange and optimum optical guidance of the beam, as well as low parasitic capacitance and resistance. This technique enhances the implementation, stability and performance of integrated lasers. With over 2000 m2 of clean rooms, Almae has an annual full production capacity of several thousand semiconductor wafers, incorporating new-generation laser components that support high-speed access over optical fibers. The company is located at Marcoussis, France, south of Paris. Shareholder Contact: Shelton Group Brett L. Perry sheltonir@sheltongroup.com This news release contains “forward-looking information” (within the meaning of applicable Canadian securities laws) and “forward-looking statements” (within the meaning of the U.S. Private Securities Litigation Reform Act of 1995). Such statements or information are identified with words such as “anticipate”, “believe”, “expect”, “plan”, “intend”, “potential”, “estimate”, “propose”, “project”, “outlook”, “foresee” or similar words suggesting future outcomes or statements regarding an outlook. Such statements include the Company’s expected benefits from its agreement with Almae Technologies and acceleration of time to commercial production as well as its expectations with respect to the capability, functionality, performance and cost of the Company’s technology. Such forward-looking information or statements are based on a number of risks, uncertainties and assumptions which may cause actual results or other expectations to differ materially from those anticipated and which may prove to be incorrect. Assumptions have been made regarding, among other things, management’s expectations regarding future growth, plans for and completion of projects by the Company’s third-party relationships, availability of capital, and the necessity to incur capital and other expenditures. Actual results could differ materially due to a number of factors, including, without limitation, operational risks in the completion of the Company’s anticipated projects, delays or changes in plans with respect to the development of the Company’s anticipated projects by the Company’s third-party relationships, risks affecting the Company’s ability to execute projects, the ability to attract key personnel, and the inability to raise additional capital. Although the Company believes that the expectations reflected in the forward-looking information or statements are reasonable, prospective investors in the Company’s securities should not place undue reliance on forward-looking statements because the Company can provide no assurance that such expectations will prove to be correct. Forward- looking information and statements contained in this news release are as of the date of this news release and the Company assumes no obligation to update or revise this forward-looking information and statements except as required by law. Neither TSX Venture Exchange nor its Regulation Services Provider (as that term is defined in the policies of the TSX Venture Exchange) accepts responsibility for the adequacy or accuracy of this release. 120 Eglinton Avenue, East, Suite 1107, Toronto, ON, M4P 1E2- Tel: 416-368-9411 – Fax: 416-322-5075 Press release source : https://poet-technologies.com/news/2018-jun-21.html…
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Almae Technologies Joins IRT Nanoelec Consortium
15/12/2017
New Partner: Almae Technologies Joins IRT Nanoelec Consortium A new partner joined the IRT Nanoelec consortium in December 2017. Almae Technologies specializes in the deposition of III-V materials used in silicon photonics component technology bricks. The company will bring know-how in custom epitaxy techniques and photonic components for telecommunications applications. Almae Technologies is involved in the IRT Nanoelec silicon photonics program. Press release source: http://www.irtnanoelec.fr/new-partner-almae-technologies-joins-irt-nanoelec-consortium/…
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