Novel Semiconductor Optical Amplifier with Large Gain and High Saturation Output Power13/09/2021Abstract:
A novel semiconductor optical amplifier (SOA) design achieving large gain and high saturation output power without reaching excessive power consumption level is presented. Small-signal gain above 35 dB and 22 dBm high saturation output power were measured at 1.3 A biased current.Published in: 2021 European Conference on Optical Communication (ECOC)Read more at https://ieeexplore.ieee.org/ […] Read more…
Flat Noise Figure Semiconductor Optical Amplifiers13/09/2021Abstract:
We propose a new SOA design with a detuned material at the input in order to guarantee low noise figure (NF) over the whole gain spectrum. NF reduction of 1.5 dB is experimentally achieved, and NF remains below 6.5 dB over C and L bands.Published in: 2021 European Conference on Optical Communication (ECOC)
Read more at https://ieeexplore.ieee.org/ […] Read more…
32dB of Optical Budget with DSP-free real time experimentation up to 50Gbit/s NRZ using O-band DFB-EAM and SOA-PIN for Higher Speed PONs07/06/2021We achieve 32.3dB of optical budget and 45km reach transmission in real time with an O-band EAM-DFB and SOA-PIN for 50Gbit/s NRZ standards. A DSP-free transmission was demonstrated with a semi-cooled transmitter.
Published in: 2021 Optical Fiber Communications Conference and Exhibition (OFC) Read more at https://ieeexplore.ieee.org/ […] Read more…
Achieving high budget classes in the downstream link of 50G-PON02/06/2021Abstract:
With 50G passive optical networks (PONs) currently being standardized, we review the challenges of meeting the high loss budgets required in such high speed fiber access networks. Simulations of the 50 Gb/s link performance show the impact of critical parameters when using 25G-class avalanche photodiode receivers with digital signal processing. We describe how a 1342 nm electro-absorption modulated laser, with an external semiconductor optical amplifier, enables an E2-class, 20 km, downstream link for ITU-T, 50G-PON to be demonstrated. Using a 25G-class receiver and real-time equalization, a link budget of 35.6 dB was measured. With more powerful equalization performed offline, an increase in the link budget to 38.2 dB is also demonstrated.
Published in: Journal of Optical Communications and Networking ( Volume: 13, Issue: 8, August 2021)
Read more at https://ieeexplore.ieee.org/ […] Read more…
First Demonstration of an E2 Class Downstream Link for 50Gb/s PON at 1342nm05/03/2021Abstract: A 1342nm EML with an external SOA has enabled the 20km, 50Gb/s downstream link for ITU-T, 50G-PON to be demonstrated for the first time. Using a 25G-class receiver and real-time equalisation, an OMA sensitivity of −24dBm and a link budget of 35.6dB were measured.
Published in: 2020 European Conference on Optical Communications (ECOC) Read more at https://ieeexplore.ieee.org/ […] Read more…
Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications07/10/2020Abstract: This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorus-based multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O- and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.
Published in: IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 27, Issue: 3, May-June 2021)Read more at https://ieeexplore.ieee.org/https://www.youtube.com/watch?v=C0NSXrSWqDs […] Read more…
Uncooled 1.55µm Electro-Absorption Modulated Laser at 28Gb/s with high power and low Vpp for datacom26/09/2019Abstract:
We present an uncooled 28Gb/s 1.55µm electro-absorption modulated laser, based on semi-insulating buried heterostructure waveguide technology. With only 0.9V peak-to-peak voltage, dynamic extinction ratio of more than 3.5dB, and facet average output power above 5dBm are demonstrated over the temperature range from 20 to 70°C.
Published in: 45th European Conference on Optical Communication (ECOC 2019)
[…] Read more…
Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform11/03/2019Abstract:
In this paper, we present the hybrid III-V/Si photonic platform developed in CEA-LETI. The overall integration is done in a fully CMOS compatible 200-mm technology, scalable to 300-mm wafers, leveraging the large-scale integration capabilities of silicon photonics. III-V material is integrated on top of a mature silicon photonic front-end wafer through direct molecular bonding enabling the monolithic integration of light sources. DFB and distributed Bragg reflector (DBR) laser reference designs are used as test vehicles for the process validation. A modular approach is used in order to minimize the impact on the already qualified silicon-based devices. Collective III-V die bonding is proposed in this platform. CMOS compatible metallizations are used to form ohmic contact on n-InP and P-InGaAs leading to contact resistivity in the range of 10 -6 Ω·cm 2 . A planarized two-metal-level BEOL is used to connect the device, leading to a drastic reduction of series resistance. Finally, the functionality of both types of lasers is demonstrated with SMSR up to 50 dB and maximum output power of 5 mW. Published in: IEEE Journal of Selected Topics in Quantum Electronics ( Volume: 25 , Issue: 5 , Sept.-Oct. 2019 ) Read more at https://ieeexplore.ieee.org/ […] Read more…
1.3µm SI-BH Electro-Absorption Modulated Laser Operating at 56Gbauds/s with 8.4dB Dynamic Extinction Ratio27/09/2018 Abstract:
We present a 56Gbaud/s 13μm electro-absorption modulated laser, based on semi-insulated buried waveguide technology. A dynamic extinction ratio of 8.4dB, with 1. 8dBm fiber coupled average power, and 112Gb/s PAM4 transmission, with a BER=10 -3 , are demonstrated. Published in: 2018 European Conference on Optical Communication (ECOC) Read more at ieeexplore.ieee.org […] Read more…
Record 6dBm electroabsorption modulated laser for 10Gb/s and 25Gb/s high power budget access networks23/03/2017
Abstract: We present an electro-absorption modulated laser with 6dBm modulated power leading to record power budget NRZ transmissions at 1.55μm: 37dB at 10Gb/s over 50km and 30dB at 28Gb/s over 10km with a pre-amplified photodiode. Published in: 2017 Optical Fiber Communications Conference and Exhibition (OFC)
Read more at ieeexplore.ieee.org […] Read more…
Barre des 1000 abonnés LinkedIn06/06/2023Almae Technologies est fière de vous annoncer que notre page entreprise publiée sur LinkedIn a atteint les 1000 abonnés ! Un grand MERCI à vous qui, de plus en plus nombreux, nous suivez sur cette page nous permettant ainsi de franchir cette étape symbolique.
Pour celles et ceux qui ne nous suivraient pas encore nous vous donnons RDV ici : https://www.linkedin.com/company/almae-technologies/ […] Read more…
PIC International Conference 202305/05/2023Almae Technologies attended the PIC international conference in Brussels on 18th and 19th April 2023.
First results from Dynamos HEU project illustrating Almae/VTT platforms compatibility were presented.
For more informations:
PIC international –> https://lnkd.in/efxBKDdc
VTT –> https://cris.vtt.fi/en/ […] Read more…
Photonic Integration Week 202321/03/2023The 6th Photonic Integration Week is running. Come and meet our CTO, François Lelarge, to learn more about Almae Technologies.
Listen and Watch François talking about our III-V foundry services –> https://lnkd.in/ed7KaQme
https://www.linkedin.com/posts/upvfab-micro-fabrication-pilot-line_the-2nd-session-of-piw23-is-running-with-activity-7043898892689498112-gLq6/?utm_source=share&utm_medium=member_desktop
[…] Read more…
Almae Technologies on BFM TV19/07/2022Our CEO, Jean-Louis Gentner, talks about Almae Technologies on BFM TV. Learn about what we do in 4 minutes just below.
https://almae-technologies.com/wp-content/uploads/2022/07/2022-07-04-17-48-48.mp4 […] Read more…
OpTecBB’visit to Almae Technologies04/07/2022In his technology expedition in France, Mike Richardson, from OpTecBB, came to visit Almae Technologies.
Take a look at his video. […] Read more…
ISO 9001:2015 Certification17/02/2022ALMAE TECHNOLOGIES Quality Management System just got ISO 9001:2015 certified! #quality #ISO
You can check your ISO certificate here. […] Read more…
ECOC 2021 at Bordeaux from 13th-16th September 202109/09/2021Almae Technologies is pleased to announce that the H2020 MASSTARTproject, led by Fraunhofer IZM and involving Almae’s laser sources, is one of the exhibitors at ECOC 2021. MASSTART intends to establish a new assembly and test paradigm for next generation 800G and 1.6T transceivers, including on-board configuration, using robust, low-cost, and high-throughput packaging and test techniques.
You are kindly invited to visit the Masstart booth. Almae team will bethere and would be pleased to share the most recent products developed by Almae (56GBauds PAM4 EML, PON-EML…). […] Read more…
“Be effective in using your experience” EPIC talks to Jean-Louis Gentner, CEO of Almae Technologies30/06/2021Jose Pozo, ‘chief technology observer’ of EPIC, has visited Jean-Louis Gentner, the co-founder of Almae Technologies, a provider of laser components and integrated laser modulators for the telecom and datacom markets.
Read more at PhotonicViews on Wiley […] Read more…
EPIC Photonics+ Virtual Exhibition and Conference 202125/11/2020Almae Technologies will have a virtual booth at EPIC Photonics+ virtual exhibition to present our products.
You can register to the virtual exhibition for free here and meet us at our virtual booth on the 17th-18th February 2021! […] Read more…
Almae to co-develop laser modules based on POET’s optical interposer platform for high-speed datacoms (from semiconductor-today.com)21/06/2018POET Technologies Inc of Toronto, Canada and San Jose, CA, USA — a designer and manufacturer of optoelectronic devices, including light sources, passive waveguides and photonic integrated circuits (PICs) for the sensing and datacom markets — has executed an agreement for the co-development of transmit device solutions with photonic product maker Almae Technologies SAS of Marcoussis, France, a spin-off from III-V Lab (the joint Nokia, Thales and CEA-Leti industrial research laboratory).
Almae is majority-owned by an affiliate of Accelink Technologies Co Ltd of Wuhan, China (a manufacturer of optical components and subsystems for the datacom, telecom and network access markets), which in March entered into a memorandum of understanding (MOU) with POET for the co-development of transceivers for 100/400G markets as well as low-cost single-channel (10/25G) products for telecom applications.
Read More at semiconductor-today.com […] Read more…
POET Press Release21/06/2018SAN JOSE, CA, June 21, 2018 – POET Technologies Inc. (“POET”) (OTCQX: POETF; TSX Venture: PTK), a designer, developer and manufacturer of optoelectronic devices, including light sources, passive wave guides and Photonic Integrated Circuits (PIC), today announced the Company has executed an agreement for the co-development of transmit device solutions with Almae Technologies SAS (“Almae”), a France-based manufacturer of advanced photonic products. The purpose of the agreement is to jointly develop, manufacture and sell a series of laser modules based on the POET Optical Interposer™ platform into high-speed data communication applications. The companies will collaborate on designs of lasers and modulators to be compatible with POET’s Optical Interposer and to provide foundry services for both epitaxial supply and device fabrication. The collective efforts of the two companies will be carried out through a series of overlapping projects, covering the exchange of data and techniques, co-development activities, commercial arrangements, and strategies for pursuing global go-to-market sales.
POET’s Chief Executive Officer, Dr. Suresh Venkatesan, commented, “We are very pleased to establish a framework for collaboration with Almae, a leading European supplier of high-performance EML lasers based on a novel buried heterostructure design and an advanced PIC fabrication platform. In addition to the joint development of Optical Interposer-compatible devices, the agreement outlines an arrangement for sharing expertise and resources to accelerate time-to-market for both companies, while also expanding our collective geographic reach and providing a much larger market opportunity.”
Dr. Jean-Louis Gentner, Chief Executive Officer of Almae Technologies, stated, “The framework for collaboration with POET follows closely behind the recent introduction of our 25G integrated laser-modulator (25G EML), which has broad application in high-performance photonics. The inclusion of our device designs into the POET Optical Interposer platform will expand the applications we can address in both the datacom and telecom markets. We are also pleased to be able to offer our epitaxial foundry services to POET and to take advantage of POET’s fabrication capabilities in Singapore.”
About POET Technologies Inc.
POET Technologies is a developer and manufacturer of optical light source products for the sensing and data communications markets. Integration of optics and electronics is fundamental to increasing functional scaling and lowering the cost of current photonic solutions. POET believes that its approach to both hybrid and monolithic integration of devices, utilizing a novel dielectric platform and proven advanced wafer-level packaging techniques enables substantial improvements in device cost, efficiency and performance. Optical engines based on this integrated approach have applications ranging from data centers to consumer products. POET is headquartered in Toronto, with operations in Silicon Valley, the United Kingdom, and Singapore. More information may be obtained at www.poet-technologies.com.
About Almae Technologies SAS
Almae Technologies is a spin-off company from III-V Lab (the joint Nokia, Thales and CEA-Leti industrial research laboratory), and is majority-owned by an affiliate of Accelink Technologies. Almae designs and produces InP epi wafers used to implement photonics circuits integrating semiconductor lasers. Almae’s high-speed ‘buried heterostructure’ laser technology consists of embedding the semiconductor strip constituting the laser with semi-insulating InP material, enabling good thermal exchange and optimum optical guidance of the beam, as well as low parasitic capacitance and resistance. This technique enhances the implementation, stability and performance of integrated lasers. With over 2000 m2 of clean rooms, Almae has an annual full production capacity of several thousand semiconductor wafers, incorporating new-generation laser components that support high-speed access over optical fibers. The company is located at Marcoussis, France, south of Paris.
Shareholder Contact:
Shelton Group
Brett L. Perry
sheltonir@sheltongroup.com
This news release contains “forward-looking information” (within the meaning of applicable Canadian securities laws) and “forward-looking statements” (within the meaning of the U.S. Private Securities Litigation Reform Act of 1995). Such statements or information are identified with words such as “anticipate”, “believe”, “expect”, “plan”, “intend”, “potential”, “estimate”, “propose”, “project”, “outlook”, “foresee” or similar words suggesting future outcomes or statements regarding an outlook. Such statements include the Company’s expected benefits from its agreement with Almae Technologies and acceleration of time to commercial production as well as its expectations with respect to the capability, functionality, performance and cost of the Company’s technology.
Such forward-looking information or statements are based on a number of risks, uncertainties and assumptions which may cause actual results or other expectations to differ materially from those anticipated and which may prove to be incorrect. Assumptions have been made regarding, among other things, management’s expectations regarding future growth, plans for and completion of projects by the Company’s third-party relationships, availability of capital, and the necessity to incur capital and other expenditures. Actual results could differ materially due to a number of factors, including, without limitation, operational risks in the completion of the Company’s anticipated projects, delays or changes in plans with respect to the development of the Company’s anticipated projects by the Company’s third-party relationships, risks affecting the Company’s ability to execute projects, the ability to attract key personnel, and the inability to raise additional capital. Although the Company believes that the expectations reflected in the forward-looking information or statements are reasonable, prospective investors in the Company’s securities should not place undue reliance on forward-looking statements because the Company can provide no assurance that such expectations will prove to be correct. Forward- looking information and statements contained in this news release are as of the date of this news release and the Company assumes no obligation to update or revise this forward-looking information and statements except as required by law.
Neither TSX Venture Exchange nor its Regulation Services Provider (as that term is defined in the policies of the TSX Venture Exchange) accepts responsibility for the adequacy or accuracy of this release.
120 Eglinton Avenue, East, Suite 1107, Toronto, ON, M4P 1E2- Tel: 416-368-9411 – Fax: 416-322-5075
Press release source : https://poet-technologies.com/news/2018-jun-21.html […] Read more…
Almae Technologies Joins IRT Nanoelec Consortium15/12/2017New Partner: Almae Technologies Joins IRT Nanoelec Consortium
A new partner joined the IRT Nanoelec consortium in December 2017. Almae Technologies specializes in the deposition of III-V materials used in silicon photonics component technology bricks. The company will bring know-how in custom epitaxy techniques and photonic components for telecommunications applications. Almae Technologies is involved in the IRT Nanoelec silicon photonics program. Press release source: http://www.irtnanoelec.fr/new-partner-almae-technologies-joins-irt-nanoelec-consortium/ […] Read more…
![[Pépite à suivre] Almae Technologies industrialise des lasers high tech (from industrie-techno.com)](https://almae-technologies.com/wp-content/uploads/2020/05/Industrie-techno.webp)
[Pépite à suivre] Almae Technologies industrialise des lasers high tech (from industrie-techno.com)20/09/2016
De l’électronique imprimée aux lasers high tech, en passant par l’ultraminiaturisation des puces, la conception de composants en nitrure de gallium ou encore la fabrication d’Oleds sur-mesure et la sécurité des circuits intégrés, la rédaction d’Industrie & Technologies a repéré dix pépites françaises de l’électronique. Parmi elles, Almae Technologies, qui conçoit et produit des wafers en phosphure d’indium.
Almae Technologies n’a pas encore soufflé sa première bougie, mais ne manque pas d’ambition. Basée en région parisienne, cette jeune pousse est issue de recherches menées au sein du III-V Lab, un groupement d’intérêt économique rassemblant Nokia Bell Labs, Thales et le CEA. Sa spécialité ? Les lasers télécoms.
Read more at industrie-techno.com
[…] Read more…
III-V Lab and Almae Technologies Press Release29/06/2016“Haute couture” photonics: Almae Technologies takes French excellence and innovation in nanoelectronics, led by III-V Lab, to an industrial scale. Almae Technologies is commercializing an innovative photonic technology developed by teams from Nokia Bell Labs, Thales and the CEA at III-V Lab to address telecom and data storage centers demands for very high speed optical data transmission.
The startup has the industrial infrastructure to rapidly bring to market advanced components required to keep pace with the rapid growth in Internet data volumes. Marcoussis, 29 June 2016 – With the regrouping of teams from III-V Lab (a company under the French “Economic Interest Group” scheme, consisting of researchers from Nokia Bell Labs, Thales and CEA/LETI), Almae technologies is taking over III-V Lab’s facilities at Marcoussis. Spun-off by III-V Lab in October 2015, Almae technologies will use the epitaxy reactors and electronic nanolithography equipment validated by III-V Lab to immediately ready for production III-V semiconductor wafers for the telecommunications market.
With over 2000 m² of clean rooms, Almae technologies will have an annual full production capacity of several thousand semiconductor wafers incorporating new-generation laser components that support very high speed access over optical fiber.
Along with the acquisition of this critical equipment, Almae technologies will benefit from a technology transfer from III-V Lab, with operational support from the laboratory’s R&D teams in laser design, fabrication and characterization. This technology transfer will enable the start-up to rapidly achieve industrial scale and to develop products that meet the growing world market demand for advanced semiconductor lasers based on III- V materials.
“We are delighted to have made this deal with Almae technologies, which brings to the market more than 10 years of research work on access photonics, strengthens our position as a technology leader in the field of laser applications for telecoms and demonstrates the value of our model of an innovative, open industrial laboratory,” comments François LUC, President of III-V Lab.
A growth market serving the needs of tomorrow’s telecoms
The rapid growth worldwide in the number of Internet users, connected objects and data traffic have led to massive use of fiber optics and hence of semiconductor lasers, which are essential for encoding the signal onto an optical carrier for transmission through the fiber.
The market has a strong growth outlook, in particular in Asia and the United States. The optical communications transmitter segment has been assessed at 4 billion dollars and is running at an annual growth rate of 12%.
A technological breakthrough in photonic integration moves out of the laboratory
Almae technologies designs and produces Indium Phosphide (InP) wafers used to implement photonic circuits integrating semiconductor lasers, made possible by licensing a portfolio of patents from Nokia. This involves a technology for growing materials with atomic-scale control developed in III-V Lab: this “buried stripe” laser technology is at the leading edge of global innovation in photonics. It consists of covering the semiconductor strip constituting the laser with an electrical insulator material with sub-micron precision, enabling good thermal exchange and optimum optical guidance of the beam. This technique enhances the implementation, stability and performance of integrated lasers: a range of products operating at up to 25 Gbit/s is in the process of development.
“We are very proud that the photonic technologies developed by Nokia Bell Labs and III-V Lab will now be applied by Almae technologies in the creation of semiconductor wafers for telecommunications industry. Many of these optical technologies are at the core of next generation networks, including 5G. They will provide the greater speed and processing required to meet the needs of a fully mobile and connected society while consuming less power. Almae technologies will also provide a reliable industrial supply chain for our innovations going forward” says Jean-Luc Beylat, President of Nokia Bell Labs France.
“We welcome the agreement with III-V Lab: it will enable Almae technologies to develop its epitaxial wafer manufacturing business on an industrial scale, along with high added value services in collaboration with InPACT, a III-V Lab partner for 10 years, while positioning Almae as a major player in the field of photonic integrated circuits. This new R&D and industrial production activity will contribute to the dynamism of the ecosystem of the Saclay plateau technology region by creating value and highly-skilled jobs in the growing sector of photonics applied to telecommunications,” says Jean-Louis GENTNER, founder and CEO of Almae technologies.
About Almae Technologies
Almae technologies was created in late 2015 at the initiative of one of the directors of III-V Lab and two managers of InPACT, and in February 2016 received a capital input from one of the major players in the photonic components industry. Almae has acquired a set of production equipment belonging to III-V Lab and benefits from a technology transfer from the shareholders of III-V Lab to enable it to become operational very quickly. Almae’s ambitious business plan and the new highly-skilled jobs which it will create will add greatly to the dynamic of the Saclay plateau in the field of photonics.
Contact: jean-louis.gentner@almae-technologies.com
About III-V Lab
III-V Lab is an Economic Interest Group (“Groupement d’Intérêt Economique”) between the CEA (the French Alternative Energies and Atomic Energy Commission), Thales and Nokia, dedicated to industrial research and development of optoelectronic and microelectronic components based on III-V semiconductors, and their integration with silicon circuits. Created in 2004, III-V Lab brings together 120 researchers in the Paris region and actively cooperates with CEA-LETI’s laboratories at Grenoble. III-V Lab has prototyping and production start-up resources to foster the emergence of high added-value component technologies which are then transferred to the industrial entities of the parent companies or their partners. www.3-5lab.fr
Press contacts
Claire Flin – +33 (0)6 95 41 95 90 – clairefline@gmail.com
Marion Molina – +33 (0)6 29 11 52 08 – marionmolinapro@gmail.com
Press release source: http://www.3-5lab.fr/doc/AlmaeTechnologies_communique_EN.pdf
[…] Read more…
Almae Technologies industrialise les lasers télécoms de prochaine génération (from usine-digitale.fr)28/06/2016Créée en 2015 par essaimage du III-V Lab, Almae Technologies prépare les prochaines générations de lasers télécoms intégrés montant à 10 puis 25 Gbit/s. De quoi répondre aux besoins d’augmentation des débits dans l’internet et les datacenters.
Développer et produire les prochaines générations de lasers télécoms indispensables à la montée des débits dans l’accès à internet et les communications au sein des datacenters. Telle est la mission d’Almae Technologies. Read more at usine-digitale.fr […] Read more…
